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| VBO 13 Single Phase Rectifier Bridge Standard and Avalanche Types + IdAV = 18 A VRRM = 800-1600 V VRSM VBRmin VRRM V 900 1300 1500 1700 V 1230 1430 1630 V 800 1200 1400 1600 Standard Types VBO 13-08NO2 VBO 13-12NO2 VBO 13-14NO2 VBO 13-16NO2 Avalanche Types VBO 13-12AO2 VBO 13-14AO2 VBO 13-16AO2 ~ - ~ ~ - + ~ For Avalanche Types only Symbol IdAV IdAVM PRSM IFSM Conditions TC = 85C, module module TVJ = TVJM t = 10 s TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 18 30 2.5 220 230 180 190 240 220 160 150 -40...+150 150 -40...+125 A A kW A A A A A2s A2s A2s A2s C C C V~ V~ Nm lb.in. g Features * Avalanche rated parts available * Package with DCB ceramic base plate * Isolation voltage 3600 V~ * Planar passivated chips * Low forward voltage drop * 1/4" fast-on terminals * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with one screw * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 3000 3600 1.5-2 13-18 15 Mounting torque (M5) (10-32 UNF) typ. Symbol IR VF VT0 rT RthJC RthJK dS dA a Test Conditions VR = VRRM; VR = VRRM; IF = 55 A; TVJ = 25C TVJ = TVJM TVJ = 25C Characteristic Values 0.3 5 1.8 0.85 17 5.6 1.4 6.0 1.5 13 9.5 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2 For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode, DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated for resistive load at bridge output, with isolated fast-on tabs. IXYS reserves the right to change limits, test conditions and dimensions. 420 (c) 2004 IXYS All rights reserved 1-2 VBO 13 Fig. 1 Surge overload current per diode IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per diode Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Constants for ZthJK calculation: i 1 2 3 Rthi (K/W) 0.059 2.714 3.227 ti (s) 0.00217 0.159 2.34 Fig. 5 Transient thermal impedance junction to heatsink per diode IXYS reserves the right to change limits, test conditions and dimensions. 420 2-2 (c) 2004 IXYS All rights reserved |
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